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| BAS70-02V Vishay Semiconductors Small Signal Schottky Diodes, Single Features * These diodes feature very low turn-on voltage and fast switching. * These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. * Space saving SOD-523 package * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e3 1 1 2 2 18554 Mechanical Data Case: SOD-523 Plastic case Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: approx. 1.6 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAS70-02V Ordering code BAS70-02V-GS18 or BAS70-02V-GS08 X Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Surge forward current Power dissipation Tamb = 25 C tp < 1 s, Tamb = 25 C Tamb = 25 C Test condition Symbol VRRM IF IFSM Ptot Value 70 200 600 200 Unit V mA mA mW Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction soldering point Junction temperature Storage temperature range Test condition Symbol RthJS Tj TS Value 100 125 - 55 to +125 Unit K/W C C Document Number 85652 Rev. 1.3, 29-Jun-05 www.vishay.com 1 BAS70-02V Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage Diode capacitance Reverse recovery time Test condition IR = 10 A (pulsed) VR = 50 V, tp < 300 s tp < 300 s, IF = 1.0 mA tp < 300 s, IF = 15 mA VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Symbol V(BR)R IR VF VF Ctot trr 1.5 Min 70 20 100 410 1000 2 5 Typ. Max Unit V nA mV mV pF ns Package Dimensions in mm (Inches) 0.15 (0.006) ISO Method E 0.22 (0.008) 0.16 (0.006) 1.6 (0.062) 0.8 (0.031) Mounting Pad Layout 1.35 (0.053) 0.3 (0.012) 0.15 A A 1.2 (0.047) 0.39 (0.015) 0.35 (0.014) 16864 www.vishay.com 2 0.6 (0.023) Document Number 85652 Rev. 1.3, 29-Jun-05 BAS70-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85652 Rev. 1.3, 29-Jun-05 www.vishay.com 3 |
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